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July 2002
NDS0605
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density process has been designed to minimize on-
state resistance, provide rugged and reliable
performance and fast switching. They can be used, with
a minimum of effort, in most applications requiring up to
180mA DC and can deliver current up to 1A.
This product is particularly suited to low voltage
applications requiring a low current high side switch.
D
S
Features
? ? 0.18A, ? 60V. R DS(ON) = 5 ? @ V GS = ? 10 V
? Voltage controlled p-channel small signal switch
? High density cell design for low R DS(ON)
? High saturation current
D
SOT-23
G
G
S
Absolute Maximum Ratings
T A =25 o C unless otherwise noted
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
? 60
± 20
Units
V
V
I D
Drain Current
– Continuous
(Note 1)
? 0.18
A
– Pulsed
? 1
P D
Maximum Power Dissipation
Derate Above 25 ° C
(Note 1)
0.36
2.9
W
mW/ ° C
T J , T STG
T L
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
? 55 to +150
300
° C
° C
Thermal Characteristics
R θ JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
350
° C/W
Package Marking and Ordering Information
Device Marking
65D
Device
NDS0605
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
? 2002 Fairchild Semiconductor Corporation
NDS0605 Rev B1(W)
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相关代理商/技术参数
NDS0605 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS0605_D87Z 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS0605_Q 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS0605-MR 制造商:未知厂家 制造商全称:未知厂家 功能描述:MOSFET NDS0605 MINIREEL 500PCS
NDS0610 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS0610 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET P SOT-23
NDS0610_D87Z 功能描述:MOSFET P-Channel FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDS0610_NL 功能描述:MOSFET 60V 10 OHM P-CH MOSFETSOT-23 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube